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《Microelectronics》 2009-01
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Influence of Dose Rate on Radiation Response of PMOSFET Dosimeter

SUN Jing1,2,GUO Qi2,ZHANG Jun1,REN Diyuan2,LU Wu2,YU Xuefeng2,WEN Lin1,2,WANG Gaili2,3,ZHENG Yuzhan2,3(1.Dept.of Physics,Xinjiang University,Urumqi 830046,P.R.China;2.Xinjiang Technical Institute of Physics & Chemistry,The Chinese Academy of Sciences,Urumqi 830011,P.R.China;3.Graduate University of the Chinese Academy of Sciences,Beijing 100049,P.R.China)  
Response of threshold voltage shift of PMOSFET dosimeter was investigated at various dose rates.Based on Vth biased model,the dose-rate effects of PMOSFET dosimeter on the linearity and sensitivity and its annealing features were observed.Results showed that,as dose rate decreased,the n value tended towards 1,with better linearity and higher sensitivity,and that PMOSFET dosimeter obviously exhibited enhanced low-dose-rate sensitivity(ELDRS).And damage mechanism of ELDRS was also discussed.
【CateGory Index】: TN386.1
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 FAN Long, REN Di\|yuan, ZHANG Guo\|qiang, YAN Rong\|liang and Erkin(Xinjiang Institute of Physics, The Chinese Academy of Sciences, Urumqi\ 830011, China)Received 28 October 1998, revised manuscript received 4 February 1999;Annealing Characteristics of PMOS Dosimeters\+*[J];CHINESE JOURNAL OF SEMICONDUCTORS;2000-04
【Co-citations】
Chinese Journal Full-text Database 3 Hits
1 HE Baoping, ZHANG Fengqi, YAO Zhibin(Northwest Institute of Nuclear Technology,Xi′an 710613,China);Simulation of MOS Devices in Radiation and Post_irradiation[J];Chinese Journal of Computational Physics;2007-01
2 LIU Chuan-yang 1, ZHANG Ting-qing 1, LIU Jia-lu 1, WANG Jian-ping 1, HUANG Zhi 1, XU Na-jun 2, HE Bao-ping 2, PENG Hong-lun 2, YAO Yu-juan 2, WANG Bao-cheng 3 (1. Research Institute of Microelectronics, Xidian University, Xi'an , Shaanxi 7100;Radiation Effects of MOS Devices at Low Dose Rate[J];Microelectronics;2002-01
3 HE Bao-ping~(1,2),ZHOU He-qin~(1),GUO Hong-xia~(2),HE Chao-hui~(2),ZHOU Hui~(2),LUO Yin-hong~(2),ZHANG Feng-qi~(2)(1.University of Science and Technology of China,Hefei 230026,China;2.Northwest Institute of Nuclear Technology,Xi'an 710024,China);Theoretic Simulation for CMOS Device on Total Dose Radiation Response[J];Atomic Energy Science and Technology;2006-04
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