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《Microelectronics》 2009-01
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Gate Degradation Mechanisms of Ti/Pt/Au-Gate SiC MESFET Induced by High-Temperature Forward Large-Current Density

CUI Xiaoying1,HUANG Yun1,EN Yunfei1,CHEN Gang2,BAI Song2(1.No.5 Res.Inst.,Ministry of Indus.and Infor.Technol.;Nat.Key Lab for Reliab.Phys.and Appl.Technol.of Electro.Prod.,Guangzhou 510610,P.R.China;2.Nat.Key Lab of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,P.R.China)  
Performances of SiC MESFET strongly depend on Schottky barrier height,and the stability of gate Schottky contact will have a further impact on the device performances.To simulate phenomena of high gate-current density resulted from RF overdrive of SiC MESFET,two kinds of high temperature forward large current test(HTFLCT) of Ti/Pt/Au-gate SiC MESFET were designed.Analysis of test data and failure samples indicated that the degeneration of parasitic shunt resistance of the gate was the main cause for degradation of gate Schottky contact and device characteristics,and even device burn-out.
【Fund】: 电子元器件可靠性物理及其应用技术国家级重点实验室基金资助项目(9140C030203070C0302)
【CateGory Index】: TN386
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Chinese Journal Full-text Database 10 Hits
1 HE Min cai,HUANG Qi jun (Dept.of Optoelectronic Technology,Wuhan University,Wuhan 430072, China);Impossibility of the decrease in dark current of guard ring short circuited photodiodes[J];Semiconductor Optoelectronics;1999-06
2 TANG Youqing1, LI Heng1, YOU Zhipu1, ZHANG Kun2, LI Renhao2, LI Zuojin2(1. Department of Physics, Sichuan University, Chengdu 610064, CHN; 2. Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN);Improvement of Leakage Current Characteristics by He-implant-induced Cavities in Si Diode[J];Semiconductor Optoelectronics;2003-02
3 WANG Li-yu~(1), XIE Jia-chun~(1), LIU Wen-qi~(2) (1. Dept.of Physics; 2. Center for Physics Science, University of Science and Technology of China, Hefei 230026, CHN);Study on Silicon Carbide (SiC) Schottky Ultraviolet Photodetectors[J];Semiconductor Optoelectronics;2004-01
4 QIU Jia-wei, HUANG Qi-jun, WU Fan, XIONG Li-jia, CHANG Sheng, DAI Feng, HE Min-cai(School of Physics Science and Technology, Wuhan University,Wuhan 430072, CHN);Simulation and Analysis of Characteristics for Intramodulated Photodetector[J];Semiconductor Optoelectronics;2004-06
5 Liu Zhonghou Zhao Chaozhong(Dept.of Physics .Harbin Normal University.Harbin 150080);New Equivalent Circuit of Solar Cell[J];SEMICONDUCTOR OPTOELECTRONICS;1994-01
6 XIE Chunmei PAN Qing LIU Tiequan HUANG Yandan YAN Zhihui JIANG Dongqiong (Chongqing Optoelectronics Research Institutes,Chongqing 400060,CHN);1.54 μm InGaAs Avalanche photodiodes with large area for eye-safe range finder[J];SEMICONDUCTOR OPTOELECTRONICS;1998-01
7 XUE Li-jun1,LIU Ming1,WANG Yan2,XIA Yang1,CHEN Bao-qin1(1. Institute of Microelectronics of CAS, Beijing 100029, China;2. Institute of Microelectronics of Tsinghua University, Beijing 100084, China);The polarization and 2DEG in AlGaN/GaN heterostructures[J];Semiconductor Technology;2004-07
8 XUE Yan-bing, WANG Dong -xing, ZHU min ( School of Electrical and information, Dalian Jiaotong University, Dalian 116028,China);Research on the Operating Characteristics of Organic Static Induction Transistor with Copper-Phthalocyanine Film[J];Semiconductor Technology;2005-04
9 Cui Xiaoying1,Huang Yun1,En Yunfei1,Chen Gang2,Bai Song2 (1.The 5th Research Institute of MII,National Key Laboratory for Reliability Physics and Application Technology of Electronic Product,Guangzhou 510610,China;2.National Key Laboratory of Monolithic Integrated Circuits and Modules,Nanjing Electronic Devices Institute,Nanjing 210016,China);Stability of Schottky Contact in Ti/Pt/Au of SiC MESFET[J];Semiconductor Technology;2008-10
10 Duan Yi,Ma Weidong,Lü Changzhi,Li Zhiguo (Microelectronic Reliability Lab.,School of Electronic Information & Control Engineering,Beijing University of Technology,Beijing 100124,China);Life Prediction of Power Schottky Barrier Diode Based on the Method of Parameter Degeneration[J];Semiconductor Technology;2009-01
China Proceedings of conference Full-text Database 1 Hits
1 LI Xin WANG Shu-fen MAO Jing-xiang ZHAO Jin-yun (Kunming Institute of Physics,Kunming 650223,China);Dark current characteristics of HgCdTe photovoltaic detectors with annular aperture p-n junction[A];[C];2007
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