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《Microelectronics》 2009-01
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Study on ESD of InGaP Heterojunction Bipolar Transistors

YAN Xiangyang1,HUAI Yongjin2,SUN Maoyou2(1.Foshan Blue Rocket Elec.Co.,Ltd,Foshan,Guangdong 528000,P.R.China;2.Beijing Yandong Microelectronics Co.,Ltd,Beijing 100015,P.R.China)  
Robustness of InGaP heterojunction bipolar transistor(HBT) devices in high-speed RF IC was studied.I-V properties of large DC signals of two types of devices,one with single-finger emitter and the other with two-finger emitter,were characterized,and their robustness against ESD stress of human body model(HBM) was tested.Results showed that the device with two-finger emitter could conduct higher-density current and withstand higher level of ESD stress than that with single-finger emitter.However,both devices had similar breakdown behavior.These results are useful for designing ESD protection circuit for RF ICs.
【CateGory Index】: TN322.8
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