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《Microelectronics》 2016-01
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Review of Modeling for Single Event Effect in Complex Digital Circuits

WU Chi;BI Jinshun;TENG Rui;XIE Bingqing;HAN Zhengsheng;LUO Jiajun;GUO Gang;LIU Jie;Institute of Microelectronics.,Chinese Academy of Sciences;Key Lab.of Silicon Devices Technologies.Chinese Academy of Sciences;The Department of Nuclear Physics,Chinese Institute of Atomic Energy;Institute of Modern Physics,Chinese Academy of Sciences;  
The generation of soft errors(SE)due to single event effect(SEE)is a significant reliability challenge in aerospace electronic systems.Modeling is an effective way to study the mechanism of SEE and the technology of hardening circuit.Some physical mechanisms in deep sub-micron technology were introduced,which could affect the accuracy of the modeling,such as propagation-induced pulse broadening,charge-sharing,reconverging and so on.At the same time,a comprehensive discussion was made on the single event transient(SET)generation model,single event upset(SEU)generation model and single event propagation model.Heavy-ion and pulsed-laser were used to verify the SEE model.Finally the scaling trends of SEE were analyzed,and the ongoing research in SEE modeling in the future was proposed.
【Fund】: 国家自然科学基金资助项目(61176095)
【CateGory Index】: TN79
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