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《Microelectronics》 2016-01
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A Trench Field Limit Ring VDMOSFET Termination Structure

SHI Cunming;FENG Quanyuan;Institute of Microelectronics,Southwest Jiaotong University;  
Field limit ring(FLR)is relatively more efficient and can be achieved by simple process technology.So it is still widely used in vertical double-diffused metal-oxide-semiconductor field transistor(VDMOS)termination structure.But there is still a limitation of increasing its performance.Trench termination is not widely used because of its high requirement about etch technology.A trench FLR termination was designed with the combination of FLR and trench termination structure.The simulation breakdown voltage could reach as high as 708 V with the termination length of only 149.7μm.Since this structure could reach a relatively deeper junction,the high electric field zone inside the silicon was far from the surface,which made the surface electric field of the silicon as low as1.83E5V/cm.It meant that it was more reliable.There was no addition of masks except the trench etch and tilted ion implant in the process.
【Fund】: 国家自然科学基金资助项目(61271090;61531016);; 四川省科技支撑计划项目(2015GZ0103)
【CateGory Index】: TN386
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