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《Microelectronics》 2016-04
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A Low Power Dual-Band Low Noise Amplifier

CHEN Penghui;ZHANG Wanrong;JIN Dongyue;XIE Hongyun;DENG Qiangwei;LIU Peng;WANG Zhongjun;ZHANG Lianghao;WANG Xiao;ZHAO Yanxiao;College of Electronic Information and Control Engineering,Beijing University of Technology;  
Based on the TSMC 0.18μm CMOS process library,a dual-band low noise amplifier(DB-LNA)was designed and implemented.In the input stage,a series of two parallel LC network and the source degenerative inductor of PMOS transistor were employed to achieve the dual-band input impedance matching.At the amplifying stage,a CMOS complementary common-source amplification structure and a current reuse technology were used to improve the system gain at low power comsumption.At the output stage,a source follower with NMOS transistor as a current source was used to buffer the signal voltage and to achieve output impedance matching.The dual-band LNA was verified by ADS.The results showed that the dual-band LNA had a gain(S21)of 26.69 dB and 20.12 dB,an input return loss(S11)of-15.45 dB and-15.38 dB,an output return loss(S22)of-16.73 dB and-20.63 dB,a noise coefficient(NF)of 2.02 dB and 1.77 dB respectively at frequencies of 1.9GHz and 2.4GHz.At a supply of 3.5Vsource voltage,the static power consumption was only 9.24 mW.
【Fund】: 国家自然科学基金资助项目(61574010 61006044 61006059 60776051);; 北京市自然科学基金资助项目(4142007 4143059 4122014)
【CateGory Index】: TN722.3
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