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《Microelectronics》 2016-04
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An Improved Low Temperature Coefficient Bandgap Reference Circuit

FAN Jiangong;FENG Quanyuan;Institute of Microelectronics,School of Information Science & Technology,Southwest Jiaotong University;  
An improved bandgap reference circuit based on traditional structure was designed,which could suppress the effect of transistor collector current changes on the output voltages.The proposed circuit could offer very low temperature coefficient and high power supply rejection ratio as well.It was based on BCD 0.18μm process,and was simulated at VINof 4.5 Vand temperature range from-40 ℃ to 140 ℃.Simulation results showed that the range of the output voltage was from 1.2567 to 1.2581 Vand the temperature coefficient was 6.3×10~(-6)/℃.The maximum change of reference output was only 1.66×10~(-4) V and the linear adjustment rate was0.006 64 % when the supply voltage changed from 2.5to 5V.The low frequency power supply rejection ratio was up to 97 dB.The OTP circuit simulation results showed that the reference circuit had a good temperature characteristics and could work properly when the temperature was lower than 140 ℃.
【Fund】: 国家自然科学基金资助项目(61271090);国家自然科学基金重点资助项目(61531016);; 四川省科技支撑计划资助项目(2015GZ0103)
【CateGory Index】: TN402
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