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《Journal of Nantong University(Natural Science Edition)》 2013-04
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Study on Thin Film Growth of InP in H_2SO_4 Etchants

LIU Han-chung;Department of Mechatronic Engineering,Ta Hwa University of Science and Technology;  
In this paper,the thin film growth of InP in H2SO4 etchants was investigated using X-ray diffraction technique,and the chemical composition of surface oxides in p-type InP(100) after etching in H2SO4/H2O etchants was analyzed.In the test,A 12 kW rotating anode(Cu) X-ray source was used to ensure high sensitivity in the surface morphology analysis.Using wide angle diffraction(WAD),the diffraction from a crystal lattice set on the surface of matrix oxide was detected to explore H2SO4/H2O etchants.There is interference patterns,possibly cause the reflex beam from thin layers of reactant,in each diffracted ray,and the resultant was indium phosphate hydrate(InPO4·xH2O) with a single-crystal structure.Only one set of(nh,nk,nl) reflection peaks of the indium phosphate hydrate phase was observed in wide angle diffraction,and there was an interference oscillation in each reflected beam.The component of In and P in the in H2SO4/H2O was mensurated by inductively coupled plasma emission spectrometry,and the dissolution rates of InP in H2SO4/H2O of various concentrations were quantitatively analyzed.The mixed component oxides and single component products were observed on the oxidized surface of InP.The dissolution rate of InP in H2SO4/H2O systems was almost indiscernible by ICP test under either illumination or dark.Comparing the X-ray results and the standard compound data in the JCPDS cards,the structural characters and the reaction phenomena of various surface oxides in H2SO4/H2O etchants can be obtained.
【Fund】: Ta Hwa University of Science and Technology(TH-102-专研-ME-03)
【CateGory Index】: TN304.055
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