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《Journal of Nanjing University of Aeronautics & Astronautics》 2018-03
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Short-Circuit Characteristics of SiC MOSFET

QIN Haihong;XU Kefeng;WANG Dan;DONG Yaowen;ZHAO Chaohui;College of Automation Engineering,Nanjing University of Aeronautics & Astronautics;College of Electrical Engineering,Shanghai Dian Ji University;  
To ensure the safety and reliablity of silicon carbide(SiC)power devices in the overload,short circuit and other conditions,the short circuit mechanism of SiC devices must be fully understood.Firstly,the mechanism of short-circuit current is analyzed in detail under hard-switching fault.Then,the influence of different circuit parameters on short circuit characteristics of SiC MOSFET is analyzed and compared.The key factors influencing the short-circuit characteristics are further revealed,and the short circuit capacity and device deterioration mechanism of Si and SiC MOSFET are compared and analyzed.The paper provides a guidance for designing short-circuit protection circuit of SiC MOSFET to some extent.
【Fund】: 国家自然科学基金(51677089)资助项目;; 中央高校基本科研业务费专项资金(NS2015039 NS20160047)资助项目;; 江苏高校优势学科建设工程资助项目
【CateGory Index】: TN386
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