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《Journal of Qufu Normal University(Natural Science)》 1990-01
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The Analysis on GaAs Doping Superlattices using Photoreflectance

Zhao Mingshan Wang Ruozhen Lin Zhenjin  
In this paper,photoreflectance of GaAs doping superlattices at 300°K isreported.A numaer of features corresponding to spatially direct transitionsdue to quantized electron or hnle states are observed in the energy range 1.430eV—1.520 eV.The energies for the various quantum transitions are determin--ed by fitting the PR spectra.The experimental results are in good agreementwith theoretical results based on the harmonic oscillator model.In addition,the energies of critical points E_1 and E_1+Δ_1 which are observed in the energyrange 2.80 ev--3.30 eV shift to higher energy due to the quantum size effect.
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