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Interfacial State and Growth Process of Diamond Films

Lu Hongxiu Hu Jinsheng Zhu Jing(Central Iron and Stecl Research Institute, Beijing, 100081) Qi Lichang Yang Peichun Xuan Zhenmu Pu Xin Hou Li(Research Institute of Synthetic Crystals, Beijing, 100018)  
In this paper the state of interface and growth process of diamond film grown on Si(100) by EACVD were observed and studied by Transmission electron microscopy (TEM) and Scanning election mieroscopy (SEM). It shows that the interface is an interfacial layer of amorphous carbon and interplanar spacings corresponding with the center of diffraction ring is irregular and the width of interfacial layer is not unifom from 0.2μm to 0.8μm.The diamond film grown on the interface consists of primary nucleus laver and crystalline grainThe interface state as well as growth process of diamond at different regions on a sample or different samples is not same.
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