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Thermodynamic Equilibrium Analysis of The MOCVD TMG-AsH_3-H_2 and TMG-AsH_3-He System

Liu Liqiang Ren Hongwen Jiang Minhua(Institute of Crystal Materials, Shandong University, Jinan 250100)  
According to thechemical thermodynamic equilibrium theory, a complete numerical method of computation was established Partial pressures of 42 gas-reaction spocies versus tomperature and V/Ⅲ ratio variation in the system of TMG-AsH_3-H_2 and TMG-AsH_3-He were calculated and compared under homogeneous and heterogeneous equilibrium conditions. Influence of partial pressures variation to the mass transport, doping characteristics and material quality caused by growth parameters were analysed.
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