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《Journal of Synthetic Crystals》 2006-01
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Temperature Field Optimization and Polytype Control in the Growth of 6H-SiC Single Crystal

LI Xian-xiang,HU Xiao-bo,DONG Jie,JIANG Shou-zheng,LI Juan,CHEN Xiu-fang,WANG Li,XU Xian-gang,WANG Ji-yang,JIANG Min-hua(State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China)(Received 26 August 2005)  
Different temperature fields are simulated for the growth of 6H-SiC single crystal via sublimation method in this paper.The growth experiments were carried out in order to confirm the simulation results.It was shown that the morphology of the temperature field varied with the position of crucible in the reactor.For instance,the radial temperature gradient increased when the crucible was translated downwards.6H-SiC crystals were grown with concave,flat and convex interfaces corresponding to small,moderate and large radial temperature gradient respectively.The occurrence of parasite polytype in the single crystal is related to the shape of the solid-gas interface and the growth rate.High quality 6H-SiC single crystal without parasite polytype can be obtained when the crystal was grown with flat interface at the rate of less than 300μm/h.
【Fund】: 国家863高技术计划(No.2001AA311080);; 教育部新世纪优秀人才资助计划
【CateGory Index】: O782
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