Full-Text Search:
Home|Journal Papers|About CNKI|User Service|FAQ|Contact Us|中文
《Journal of Synthetic Crystals》 2006-01
Add to Favorite Get Latest Update

Preparation and Optical Characterizations of Zn_(1-x)Mg_xS Thin Films Prepared by Magnetron Sputtering

SUN Wang-dian,MIAO Yin-ping,ZHU Zhen(Department of Physics,Jinan University,Guangzhou 510632,China)  
Polycrystalline Zn_(1-x)Mg_xS thin films for Ⅱ-Ⅵ compound solid-solution semiconductor were successfully prepared on the quartz glass substrates by magnetron sputtering with two targets.The compositions,structures,morphologies and optical characterizations of the films were investigated by EDS,AFM,XRD,UV-visible absorption spectra and PL spectra.The results show that a cubic and hexagonal mixed phase crystal could be formed when x is from 0.33 to 0.75.The film has a very strong absorption in the short wavelength range and a violet light emission peak at room temperature.The intensity of the light emission peaks increase with increase of the Mg content of the films.The blue shifts of the absorption edge and the light emission peak also increase.The blue shifts indicate that the band-gap of the film increases from 3.6eV to 4.4eV.It is concluded that Zn_(1-x)Mg_xS thin films are promising materials for short wavelength optoelectronic applications and ultraviolet detectors.
【CateGory Index】: O484.1
Download(CAJ format) Download(PDF format)
CAJViewer7.0 supports all the CNKI file formats; AdobeReader only supports the PDF format.
Chinese Journal Full-text Database 10 Hits
1 WU Xiu-long~1, MENG Jian~1, KE Dao-ming~1, CHEN Jun-ning~1,SHI Long-xing~2, SUN Wei-feng~2 (1.Department of Electronic Engineering and Information Science, Anhui University, Hefei230039,China; 2.National ASIC System Engineering Research Center, Southeast University, Nanjing210096,China);Analysis of LDMOS breakdown voltage after using field plate[J];Journal of Anhui University(Natural Sciences);2004-01
2 Zhou Guanshan No.014 Center under the Ministry of Aircraft Industry Luoyang 471009;Test on Impurity Concentration and Profile of Cd Diffusion in InSb By Using C-V Method[J];Semiconductor Optoelectronics;1991-04
3 Guan Hui Zhu Changchun (Dept.of Elecfronics Engineering,Xi'an Jiaotong University,Xi'an 710049);Study on Si Field Emission Photodetector and Si-cones Cathode Technology[J];Semiconductor Optoelectronics;1993-02
4 Liu Jungang; Li Ping (Chongqing Optoelectronics Research Institure,Yongchuan 632163);A CCD Imaging Device with 756 ×581 Pixels[J];SEMICONDUCTOR OPTOELECTRONICS;1994-02
5 Liu Jungang; Zhao Wenbo; Li Ping(Chongqing Optoelectronics Research Institute. Yongchuan 632163);A 600(V)×500(H) Element Frame Transfer CCD Image Device[J];SEMICONDUCTOR OPTOELECTRONICS;1994-04
6 LI Guozheng;ZHANG Hao (Dept. of Electronic Engineering,Xi'an Jiaotong University,Xi'an 710049);Theoretical calculation of internal quantum efficiency of Ge_xSi_(1-x)/Si IR detectors[J];SEMICONDUCTOR OPTOELECTRONICS;1995-04
7 WANG Tao,WANG Zheng-zhi (Automation College, National University of Defence Technology, Changsha 410073, China);Comparison of Surface Passivation Schemesfor Silicon Solar Cells[J];Semiconductor Technology;2006-07
8 HOU Jun-yan1,DAI Hui-ying1,2 , SHI Wei2,DONG Qiu-Xia1 ( 1. Science Institute, Air Force Engineering University, Xi' an 710051, China; 2. Department of Applied Physics, Xi' an University of Technology, Xi' an 710048, China);Compare of Scattering Mechanisms in SI GaAs Photoconductive Switch[J];Semiconductor Technology;2006-12
9 Shi Jinxing (Dept.of Applied Physics and Heat Eng.,Central South Univ.of Technology,Changsha 410083);Ohmic Contacts to GaN[J];SEMICONDUCTOR INFORMATION;1999-05
10 Yang Yongjun , Wang Changhe,Bai Shuhua(The 13th Institute,Ministry of EI, Shijiazhuang, 050051);Investigation of Low Frequency Low Noise Bipolar Transistors Working at Liquid Nitrogen Temperature[J];SEMICONDUCTOR INFORMATION;1995-03
China Proceedings of conference Full-text Database 1 Hits
1 Wu min, Huang Zhao Hong Laboratory of Photonic Information Technology, SCNU, Guangzhou China;InSb Magnetoresistance IR-Photoelectric Sensor and It's Characteristic Research[A];[C];2006
©2006 Tsinghua Tongfang Knowledge Network Technology Co., Ltd.(Beijing)(TTKN) All rights reserved