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《Journal of Synthetic Crystals》 2006-06
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Growth of cBN Crystal in the Boron-rich System

DU Yong-hui,YANG Xu-xin,JI Xiao-rui,YANG Da-peng,GONG Xi-liang,SU Zuo-peng,ZHANG Tie-chen(National Laboratory of Superhard Materials,Jilin University,Changchun 130012,China)  
In this paper,growth characters of cBN crystal in hBN-Li_3N system with different contents of B additive were investigated under high pressure and high temperature.The results show that boron atoms entering cBN crystal had distinct location character.B atoms occupy N vacancies in the(111) plane and therefore leads to forming a new plane made of B and N atoms.With B additive increasing,more N vacancies are substituted.The new B-N(111)plane and its neighboring B (111) plane overlapping with each other resulted in forming dark triangle shadow in(111) plane of cBN crystal.The triangle extended through to the whole cBN crystal,which changed the color of cBN crystal into black.Owing to excessive B locating at N(111) planes,the growth of cBN crystals along 111 direction became difficult while the growth along 100 direction was favorable.So the morphology of the obtained cBN crystals changed from thick plank into near perfect octahedron or sphere-like morphology.At the same time,cBN could be also obtained by the chemical reaction between Li_3N and B,so the formation of cBN crystal in this B-rich system could be controlled by two mechanisms: dissolve-recrystallization and chemical reaction process.The experimental results show cBN nucleation decreases with B additive increases.This indicates that the dissolve-recrystallization is dominant process in the B-rich system,if Li_3N is excessive.
【CateGory Index】: O782
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