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《Journal of Synthetic Crystals》 2009-01
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Room Temperature Epitaxial Growth of ZnO Thin Film on Sapphire Substrates by RF Magnetron Sputtering

ZHOU Yang1,QIU Man-de2,FU Yue-ju1,XING Jin-zhu1,HUO Ji-chuan1,PENG Ying-cai3,LIU Bao-ting1(1.College of Physics Science and Technology,Hebei University,Baoding 071002,China;2.College of Chemistry andEnvironmental Science,Hebei University,Baoding 071002,China;3.College of Electronic and Information Engineering,Hebei University,Baoding 071002,China)  
Epitaxial ZnO thin film has been fabricated on sapphire substrate(0001) using RF magnetron sputtering at room temperature.The microstructural and optical properties of ZnO film were investigated by atomic force microscope(AFM),X-ray diffraction(XRD),Vis-UV spectrophotometer at room temperature.The AFM measurement shows that the uniform grain sized ZnO film is very smooth with root mean square roughness of 0.9 nm.XRD results indicate that the ZnO film grown on sapphire is epitaxial with wurtzite structure.Room temperature optical transmission spectra of the ZnO sample demonstrates that the average transmittance is over 85% in visible region and the abrupt Absorption edge of the film appears at about 370 nm,implying high quality of the as-grown ZnO film prepared at room temperature.
【Fund】: 973前期专项项目(No.2007CB616910);; 国家自然科学基金(No.50572021);; 河北省自然科学基金项目(No.E2008000620 No.A2005000090);; 教育部基金项目(No.2005-546 207013);; 河北大学青年基金(No.2005Q08)
【CateGory Index】: O484.1
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