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《Journal of Synthetic Crystals》 2009-01
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Effect of Annealing Temperature on the Structure of Ge Nanocrystals Embedded in SiO_2 Film

ZHANG Jia-wen,GAO Fei,YAN Chun-yu,SUN Jie,QUAN Nai-cheng,LIU Wei,FANG Xiao-ling(School of Physics Information Technology,Shaanxi Normal University,Xi'an 710062,China)  
Ge nanocrystals embedded in SiO2 films were prepared by magnetron sputtering and subsequent thermal annealing method at different temperatures.The structures of Ge nanocrystals were investigated by Raman scattering and X-ray diffraction.It is found that the Ge nanocrystal could form at about 750 ℃.Raman spectra were fitted by phonon confinement model(RWL model),and the sizes of Ge nanocrystals have been obtained.The compressive stress exerted on Ge nanocrystals was calculated using XRD data,which caused the Ge Raman peak blue shift.Our studies showed that it is the compressive stress that mainly cause the peak position discrepancy between fitted Raman curve and experimental curver.
【Fund】: 陕西省自然科学基金(No.691150)
【CateGory Index】: O611.3
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