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《Journal of Synthetic Crystals》 2009-01
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Effect of Oxygen Partial Pressure and Deposition Rate on the Properties of ITO Film

GUO Zhan-ying1,2,XU An-tao2,ZHANG Qing-feng1,GAO Xiao-yong1(1.Key Laboratory of Material Physics of Ministry of Education,School of Physical Engineering,Zhengzhou University,Zhengzhou 450052,China;2.Department of Physics,Jiaozuo Normal College,Jiaozuo 454001,China)  
In this paper,we paied attention to the effect of oxygen partial pressure and deposition rate on the properties of ITO film which was prepared by electron beam evaporation on glass substrates.The results show that with the increase of the oxygen partial pressure the sample reflectivity,transmission and the energy gap were all increased at first,and then decreased.At the same time the effect of the deposition rate on the sample reflectivity,transmission and microstructure have been studied.It shows that lower deposition rate is better to the properties of samples.
【CateGory Index】: O484.41
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