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《Journal of Synthetic Crystals》 2013-01
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Finite Element Numerical Simulation and Control Parameter of Czochralski Silicon Monocrystal during Shoulder Growth Process

ZHANG Jing,LIU Ding,ZHAO Yue,JIAO Shang-bin(School of Automation and Information Engineering,Xi'an University of Technology,Xi' an 710048,China)  
Both formation of a dislocation free crystal nucleus and abilitity to entrance to body growth during crowning growth are cruxes of Cz-Si monocrystal growth.It often shows dislocation happened after an unknown flow on melt surface cutting in crystal in the process of crowning growth in practice.In the paper,crystal rotation process is proposed at the beginning of crowning growth.Melt convection and temperature distribution are calculated by finite element numerical simulation.Flow rate variation near the solid-liquid interface melt surface and explanation the formation of the flow are given.Simulation and experiment results show the effectiveness for the proposed method.
【Fund】: 国家科技重大专项(2009ZX02011001);; 教育部科学技术研究重点项目资助项目(212169)
【CateGory Index】: O782
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