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《Journal of Synthetic Crystals》 2013-01
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Optical Properties of CuInS_2 Semi-conductive Films Prepared by Electrodeposition

SUN Qian1,GUAN Rong-feng1,ZHANG Da-feng2(1.Institute of Material Science and Engineering,Henan Polytechnic University,Jiaozuo 454000,China; 2.Institute of Physics and Chemistry,Henan Polytechnic University,Jiaozuo 454000,China)  
Using electrochemical cyclic voltammetry,volt-ampere characteristic of Cu2+,In3+ and S2O2-3 was studied at different pH value.Three kinds of ions appear similar behavior of electrochemical reduction with citric acid as complexing agent,pH of the solution equals 6 and deposition potential of-0.8 V.On such a basis,CulnS2 semiconductor thin films onto indium tin oxide substrate were prepared by chronoamperometry,which used for absorption layer material of CIS thin film solar cells.In order to improve the crystallization of polycrystalline CuInS2,three different heat treatment atmospheres were selected for heat treatment,including bare burning in the air,burning in the argon,vulcanization in the argon.SEM,XRD and Raman spectrum results show that uniform and well-crystallized CuInS2 semiconductor films are synthesized through vulcanization heat treatment with the argon in the stove.In addition,the Cu/In ratio can also affect the crystallization of thin films,and mostly composed of chalcopyrite with the increasing Cu/In ratio.When Cu/In ratio equals 1.8 and the deposition potential of-0.8V,high quality CuInS2 semiconductor films are prepared,with the optical band gap of 1.55 eV.
【Fund】: 国家自然科学基金(21276220);; 河南基础与前沿科技项目(082300440150);; 江苏省新型环保重点实验室开放课题(AE201124)
【CateGory Index】: TN304.2
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