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《Journal of Synthetic Crystals》 2015-01
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Decomposition of GaN and Direct Deposition of Nano-diamond Film in Microwave Plasma

TIAN Han-mei;LIU Jin-long;CHEN Liang-xian;WEI Jun-jun;HEI Li-fu;LI Cheng-ming;Institute for Advanced Materials and Technology,University of Science and Technology Beijing;  
The decomposition mechanism of GaN in microwave plasma was studied systematically using the microwave plasma chemical vapor deposition(MPCVD) technology. The results indicate that H-rich environment accelerates the GaN decomposition reaction. It was proposed that decomposition reaction begins at the surface defects,spreads in the lateral direction and stops until the N-face facet was etched.Addition of a small amount of N2 into the hydrogen plasma can inhibit the decomposition reaction of GaN to Ga and N2 effectively. Based on this,direction deposition of nano-crystalline diamond on GaN by twostep method was achieved successfully.
【Fund】: 国家自然科学基金(51272024);国家自然科学基金(51402013);; 中国博士后科学基金(2014M550022);; 中央高校基本科研业务费(FRF-TP-14-042A1)
【CateGory Index】: TN304.055
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