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《Journal of Synthetic Crystals》 2015-01
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Numerical Simulation on the Effect of the Rotating on the Heat Transfer and Melt Flow during the Silicon Crystal Growth Process by Cz Method

JIN Chao-hua;ZHU Tong;School of Mechanical and Energy Engineering,Tongji University;  
A two-dimensional axial symmetric global model of 120 kg single-crystal furnace was developed to simulate the four working conditions of without rotating,crystal rotating,crucible rotating,both crystal and crucible rotating. The effect of rotation on the growth power,temperature distribution and melt flow during the crystal growth were obtained; the variation trends of the temperature distribution and melt flow change as the crystal length increasing were also obtained. The result shows that the effect of the crystal rotating on the growth power,temperature distribution and melt flow is less-than the crucible rotating; the effect of the rotation on the temperature distribution and melt flow decreases as the crystal length increasing. Therefore,it is important to concern the whole crystal growth process during the designing and optimization of the furnace.
【Fund】: 国家自然科学基金(51146005);; 亚热带建筑科学国家重点实验室开放课题(2010KA01)
【CateGory Index】: TN304.12
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