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《Journal of Synthetic Crystals》 2015-01
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Study on the Chemical Mechanical Polishing of ZnSe

WU Chuan-chao;AN Yong-quan;WANG Zhi-bin;YANG Chang-qing;ZHANG Rui;Engineering Technology Research Center of Shanxi Province for Opto-Electronic Information and Instrument;Key Lab of Instrument Science and Dynamic Measurement,Ministry of Education,North University of China;  
The ZnSe wafer(50 × 50 × 1. 5) mm3 was polished by chemical mechanical polishing(CMP)method using self-made abrasive as grinding medium. After the effects of the parameters such as the pH value of the polishing liquid on the CMP had been analyzed,rotating rate,the concentration of abrasive,pressure,polishing time and a flow rate of polishing liquid,the best process parameters could be obtained. The ZnSe wafer after polishing with the best process parameters was detected by an atomic force microscope and optical flat. The experimental results show that the surface roughness is 0. 578 nm and the optimal flatness is less than 1. 8 μm.
【Fund】: 国际科技合作项目(2013DFR10150)
【CateGory Index】: TG175
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