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《Journal of Synthetic Crystals》 2015-01
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Crystallization Kinetics of Aluminum-induced Amorphous Silicon Thin Films

ZHANG Li-yuan;DUAN Liang-fei;YANG Wen;YANG Pei-zhi;DENG Shuang;TU Ye;CHEN Xiao-bo;Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology,Ministry of Education,Yunnan Normal University;Solar Energy Research Institute,Yunnan Normal University;  
In order to investigate the kinect mechanism of Aluminum-induced crystallization of amorphous silicon,microcrystalline silicon thin films were prepared by rapid photo-thermal annealing of magnetron sputtered Al /Si thin films. The thin films prepared at various substrate temperatures and annealing time were characterized by Profile-system,Raman scattering spectroscopy(Raman) and X-ray diffraction(XRD). The results show that annealing and substrate heating lead to the formation of silicon-Aluminum composite at the Al /Si interface. Prolonged annealing time promotes the interdiffusion of Al and Si,facilitating the nucleation of microcrystalline silicon. The optimized Aluminum grain size and orientation,effectively improve the effect of Aluminum induced crystallization.
【Fund】: 国家自然科学基金联合基金(U1037604)
【CateGory Index】: O484.1
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