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《Journal of Synthetic Crystals》 2015-01
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Effect of Nitrogen Pressure on the Morphology and Photoelectric Properties of ZnO Films Prepared by PLD

WU Ke-yue;WU Xing-ju;Department of Materials and Chemical Engineering,West Anhui University;Center of Solar energy development and application,West Anhui University;  
The effects of nitrogen pressure on the morphology and photoelectrical properties of ZnO thin films growth by the pulsed laser deposition( PLD) were studied. The results show that ZnO films are composed of slices with size of 50 nm under lower nitrogen deposition pressures. As the nitrogen pressure increasing,the morphology of ZnO films shows porous structure and the size decreases as the nitrogen pressure increasing. The near band gap photoluminescence( PL) peak( 380 nm) and the defect PL peak( 520 nm) were observed in the samples growth under higher nitrogen pressures( above 20Pa). Samples growth under 2 Pa and 5 Pa nitrogen pressure show a distinct PL spectrum with a violet emission centered at about 410 nm and 400 nm,respectively. The resistivity of ZnO thin films growth under 2 Pa and 5 Pa nitrogen pressures are 104 and 105times higher than that of ZnO samples deposition under 20 Pa and 50 Pa nitrogen pressures,respectively. These results indicate that Zn and O ions from the target have large mean free path and large average kinetic energy under the low nitrogen pressure,which can make N2 ionization and the N ion can easily dope into ZnO crystal lattice. Zn and O ions have small average kinetic energy under high nitrogen pressures,which can't make N2 ionization and N ion can't easily dope into the ZnO lattice.
【Fund】: 皖西学院优秀青年基金(WXYQ1314);; 六安市委托定向皖西学院项目(2013LWA012);; 国家自然科学基金(21377099);; 安徽省自然科学基金(1408085QA13)
【CateGory Index】: O484.41
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