Process Research of Silicon Nitride Thin Film Annealed in Various Atmospheres by Tube Type PECVD
GUO Li;WU Wen-ping;CHEN Li;Shanxi Lu'An Photovoltaics Technology Co.,Ltd.;Shanxi Lu'An Coal-Based Clean Energy Co.,Ltd;
The study on the effects of vacuum annealing and nitrogen annealing on properties of silicon nitride thin film with different annealing temperature and annealing time were carried out. Film thickness,refractive index,life time and electrical properties were measured,respectively. The results show that for tube type PECVD the atmosphere in vacuum is superior to nitrogen atmosphere,and the annealing parameters are determined concluded as 450 ℃ and 20 min. It was detrimental to both forming good quality ohmic contact and film thicknesses increase when the temperature was too high or too low,and photoelectric conversion efficiency was worse too at this time. But the variation of refractive index was different,which maximum values were reached at low temperature. Meanwhile,it is more beneficial to obtain high refractive index in the nitrogen environment. In addition,the relationship of temperature and atmosphere with the thickness and refractive index were discussed in detail.
【CateGory Index】： TM914.4