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Study on Deep Energy Level in Semimagnetic Semiconductor Cd_(1-x)Mn_xTe

Ling Zhihua Jing Yumei Huang Ximin Ma Kai(Changchun Institute of Physics,Academia Sinica,Changchun 130021,China)  
In this paper,an acceptor` s deep energy level,about 0.18eV above valence band is obtained by measuring the specific conductance of semimagnetic semiconductor Cd_(1-x)Mn_xTe in the temperature range between 77K and 300K. The deep energy level is assigned to a combination of[V_(Cd) ̄(2-)D ̄+]by theory analysis and measurement of electrical conductivity after annealing.Addtional ,some parameters of Cd_(1-x)Mn_xTe crystal are obtained by measuring Hall effect at room temperature using Van der Paul method.
【Fund】: 国家自然科学基金
【CateGory Index】: O471
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