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A Review on Growth Methods of Chalcopyrite CuInSe 2 Single Crystal

Yu Xiaoyan Ma Hongwen Yang Jing (China University of Geosciences,Beijing 100083,China) (Received 5 October 1998,accepted 14 December 1998)  
The Cu Ⅲ Ⅵ 2 group of chalcopyrite semiconducting compounds continue to attract increasing interest due to their potential for optoelectronic device applications.CuInSe 2,a member of this group,has a direct band gap of about 1 eV and a large optical absorption coefficient.Because of these properties,it offers the possibility to be used in photovoltaic devices.Studies of growth and characterization of bulk CuInSe 2 crystals will be helpful for a better understanding of the properties of the crystals and will provide useful information for improvement of the thin film solar cells.In this paper the growth methods for large single crystal of CuInSe 2 are introduced and discussed.
【Fund】: “地矿部百名跨世纪科技人才培养计划”基金
【CateGory Index】: TN304.250.4
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