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《JOURNAL OF SYNTHETIC CRYSTALS》 1999-02
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Difference of EPDs on(111) B and (211) B Faces of CdZnTe Crystals by Using Everson Etch

Gu Huiming Yang Jianrong Chen Xinqiang He Li (Epitaxy Research Center for Advanced Material and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China)  
Etch pit density (EPD) on both (111) B and (211) B faces of CdZnTe wafers by Everson etch were studied. It was found that EPD on (111) B face was much greater than that on (211) B face.The EPD on (111) B of CdZnTe crystal exhibited a dependence on the full width at half maximum (FWHM) of X ray double crystal rocking curves.The FWHM of X ray double crystal on (111) B face increases in direct ratio with the EPD.However,such dependence was not observed on (211) B face.The results show that the difference of EPDs on different crystal orientations must be considered when using Everson etch method.The EPDs on (111) B surface are more reasonable to show the information of the defects in CdZnTe crystals.
【CateGory Index】: O77
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