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《Lubrication Engineering》 2009-04
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Experimental Study on Parameter Optimization of GaAs Wafer Polishing Using Taguchi Method

Lv Xun1Yu Wei2(1.The MOE Key Laboratory of Mechanical Manufacture and Automation,Zhejiang University of Technology,Hangzhou Zhejiang 310032,China;2.Department of Information and Electrical Engineering,West Branch of Zhejiang University of Technology,Quzhou Zhejiang 324000,China)  
Chemical mechanical polishing method was used to machine GaAs wafer efficiently in order to obtain ultra-smooth GaAs wafer surface.H2O2,CeO2 and NH4OH were used as polishing slurry.Four key parameters,concentration of H2O2,concentration of NH4OH,polishing load and polishing plate speed which influence surface roughness and material removed rate of GaAs wafer were analyzed by Taguchi method and the optimized parameters were gained.The result shows that when the mass fraction of H2O2 is 30%,the mass fraction of NH4OH is 0.08%,the polishing load is 18 kPa and the polishing plate speed is 30 r/min,the optimal polishing efficiency can be obtained.
【CateGory Index】: TG175
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