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La_2O_3 Doped Amorphous Carbon Film and Affection for its Surface Free Energy and Interfacial Energy

ZHANG Lin1,CHEN Dihu2,YU Fengmei1,HUANG Zhanyun2,PAN Shirong3(1.Information College,Zhongkai University of Agriculture and Engineering,Guangzhou 510225,China;2.State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,Guangzhou 510275;3.Artificial Hart Lab,The 1st Affiliated Hospital of Sun Yat-Sen University,Guangzhou 510080)  
La2O3 doped amorphous carbon(a-C) films were deposited on silicon substrates using a Radio-Frequency magnetron sputtering.The effect of doped rare earth on the microstructure,surface free energy and interfacial energy of a-C films were studied using Raman spectra and contact angle test,respectively.Results show that rare earth addition increases the surface free energy and its polar component of the a-C films.The mechanism of haemocompatibility of a-C films doped rare earth is discussed.
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