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《Journal of Shanghai Jiaotong University》 2013-01
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Effect of Device Size on Pulse Quenching in a 65 nm Bulk CMOS Process

LI Peng,ZHAO Zhen-yu,ZHENG Chao,ZHANG Min-xuan(College of Computer,National University of Defense Technology,Changsha 410073,China)  
The connection between the size of passive inverter and trend of pulse quenching was studied by using circuit level simulation under 65nm bulk complementary metal-oxide-semiconductor transistor(CMOS) process.It is found that bipolar amplification plays an important role in pulse quenching trend after changing the size of passive inverter.Pulse quenching will be zoomed in after increasing the size of passive inverter,whose inner bipolar amplification is stronger.In the contrast,pulse quenching will be zoomed out after increasing the size of passive inverter.
【Fund】: 国家自然科学基金项目(60906009 61076025 60970036)
【CateGory Index】: TN386.1
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Chinese Journal Full-text Database 1 Hits
1 Liu Zheng Chen Shu-Ming Liang Bin Liu Bi-Wei Zhao Zhen-Yu(Institute of Microelectronics and Microprocessor,College of Computer,National University of Defense Technology,Changsha 410073,China);Research of bipolar amplification effect in single event transient[J];Acta Physica Sinica;2010-01
Chinese Journal Full-text Database 4 Hits
1 QIN JunRui *,CHEN ShuMing & CHEN JianJun School of Computer Science,National University of Defense Technology,Changsha 410073,China;3-D TCAD simulation study of the single event effect on 25 nm raised source-drain FinFET[J];中国科学:技术科学(英文版);2012-06
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【Secondary Citations】
Chinese Journal Full-text Database 2 Hits
1 Zhang Qing-Xiang 1)2) Hou Ming-Dong 1) Liu Jie 1) Wang Zhi-Guang 1) Jin Yun-Fan 1) Zhu Zhi-Yong 1) Sun You-Mei 1) 1)(Insititute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China) 2)(Center for Space Science and Applied Research, Chinese Academy of Sciences, Beijing 100080, China);The dependence of single event upset cross-section on incident angle[J];Acta Physica Sinica;2004-02
2 Li Hua(Department of Physics, Jinan University, Guangzhou 510632, China);Monte Carlo simulation of the SRAM single event upset[J];Acta Physica Sinica;2006-07
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