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《Journal of Shantou University(Natural Science Edition)》 2002-01
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Effects of the Oxidation Layer Upon theMicrostructure of Au Thin Film

Yu Bo Shi Wangzhou (Department of Physics,Shantou University,Shantou,515063)  
In this paper the effects of the oxidation layer upon the microstructure of Au-As thin film deposited on Si is investigated by means of X-ray diffraction and SEM.It has been found that the oxidation layer exerts influence upon the growth rate,grain size and interfacial structure of the thin film on the one hand,and prevents both the interfacial diffusion of Au-As interface and the formation of Si-Au alloy phase on the other hand.
【CateGory Index】: TN304.055
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【Citations】
Chinese Journal Full-text Database 1 Hits
1 Li Bingchen, Wang Yutian, Zhuang Yan(Institute of Semiconductors, The Chinese Academy of Sciences, National Reserach Center for Opto electronic Technology, Beijing 100083);Mechanism of Non Alloyed Pt Ni/p InP Low Resistance Ohmic Contact[J];CHINESE JOURNAL OF SEMICONDUCTORS;1998-05
【Co-citations】
Chinese Journal Full-text Database 1 Hits
1 HU Bi-lu,ZHONG Sheng-hai,WANG Chun,ZHANG Zhi-bin;A Leap in Human Intelligence——A Brief introduction to the 2000 Nobel Prize in Physics[J];Journal of Ankang Teachers College;2001-02
【Secondary Citations】
Chinese Journal Full-text Database 2 Hits
1 Xu Zhenjia(C. C. Hsu);Ding Sun-an(National Laboratory for Surface Physics,Institute of Semiconductors, CAS, Beijing);RECENT DEVELOPMENTS IN OHMIC CONTACT FOR A~Ⅲ B~Ⅴ COMPOUND SEMICONDUCTORS[J];;1994-02
2 Xu Zhenjia (C. C. Hsu)(Institute of Semiconductors, CAS, Beijing, 100083 );Semiconductor Devices Processing and Thin Film Science[J];;1997-06
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