On Thermal Treatment for Reducing Light Point Defect of GaAs Monocrystal Wafer
YANG Yi;ZHOU Chunfeng;LAN Tianping;No.46 Research Institute of China Electronic Technology Group Corporation;
GaAs monocrystal material has already become one of the important fundamental materials in microelectronics and optics-electronics and has been widely applied in these fields. Thermal treatment was carried out under different temperatures and different arsenic vapor pressures for GaAs monocrystal wafers in order to reduce the light point defect. Meanwhile, the existence form of As in GaAs and its mechanism during the thermal treatment were studied in detail.
【CateGory Index】： TN304.2