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Effect of Plasma Pressure on the Properties of a-S∶H Films

Wang Cheng Cheng Ruguang (Shanghai Institute of Ceramics,Academia Sinica)  
The effect of the plasma pressure on the hydrogen content,type of the Si-H bond-ing,photoluminescence,optical gap and the electric transport properties of plasmadeposited hydrogenated amorphous silicon(a-Si:H)has been studied.It has beenindicated that the composition,structure and properties of a-Si:H films are stronglyaffected by the plasma pressure,a-Si:H films can be classified as two different typeswith entirely different composition,structure and properties,depending on whether their gaspressure employed during the plasma deposition is located on high pressure or lowpressure branch of Paschen curve.An important result has been obtained from theobservation that samples prepared at PP_0, P_0 is the pressure of Paschen curveminimum,contain silicondihydride and have a kink in the conductivity curve near410K,whereas samples prepared at PP_0 do not.A tentative explanation is given.
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