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Diffusion of Phase Boundary and Crystallization Behaviors for Tio_2/SiO_2 Composite Films

ZHAI Ji-Wei; ZHANG Liang-Ying;LAO Xi(Electronic Materics Research Laboratory, Xi'an Jiaotong University Xi'an 710049 China)  
The crystallization behaviors of sol-gel TiO2/SiO2 composite films and the phase boundary diffusion of the film alld the buffer la3.er were studied. 50TiO2/50SiO2 films annealed between 500"C and 950'C exhibited crytsallizatioll in the anatase ad rutile phases. The structure of the thin film transformed from amorphous state into anatase, and from anatase into rutile and induced the crystallization of SiO2. For TiOZ/SiO2 film deposited on a dense silica and nano-porous SiO2 surface, the diffusion of Ti call be observed in the nano-porous layer by BES. Between the film and the bllffer layer carboll was also observed by AES. SEAl and EDS revealed the distribution of carboll in the thin film surface. With the increasing heat-treatment temperature in O2 the conent of carbon decreajsed.
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