Observation on Defects in Sapphire Single Crystal Grown by the EFG Method
MA Sheng-Li; JING Xiao-Tian; SHUN Qiao-Yan(School of Material Science and Engincering, Xi'an University of Technology Xi'an 710048 China)
? Sapphire (1102) ribbon and (0001) bar were prepared by tile EFG methods and its crystal defects, such as dislocation, subgrain boundary as well as faceting plane were investingated experimentally. The influence of growth process on crystal defects was discussed. It was found that crystal growth rate and the quality of seed crystals were the two critical factors ti.hich affect the formation of defects in sapphire single crystals.