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Temperature Dependence of β-SiC Thin Films Epitaxial Grown on Si Substrates

JIA Hu-Jun; YANG Yin-Tang; ZHU Zuo-Yun; LI Yue-Jin(Microelectronics Institute, Xidian University, Xi'an 710071, China)  
β-SiC thin films were heteroepitaxially grown on (100)Si substrates at a temperaturerange from 1000 to 1400℃ by atmospheric pressure chemical vapor deposition (APCVD) process.Experimental results show that the epitaxial layers change from polycrystalline silicon into singlecrystal β-SiC state with the deposition temperature's increasing, but the growth rates of singlecrystal films decrease inversely.
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