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Influence of Processing Parameters on the Deposition of a-CN_x Films

XIAO Xing-Cheng; JIANG Wei-Hut; SONG Li-Xin; TIAN Jing-Fen; HU Xing-Fang(Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China)  
The influence of basic processing parameters on the deposition of a-CN_x was studied.The results show that the increase of N flux enhances the deposition rate of the film as well asincreases its N content. While higher sputtering power leads to higher deposition rate. Further-more, the employment of bias will prove to be beneficial in the preparation of CN_x film in thatit not only facilitates the densification process and produces a smoother surface morphology, butalso increases the content of N in the film.
【Fund】: 国家攀登计划!07-01;;国家自然科学基金!59782006;;中国科学院上海硅酸盐研究所所长择优基金!SZ97-4
【CateGory Index】: O484
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【Secondary References】
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