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《Journal of Inorganic Materials》 2004-01
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Fabrication of n-type Bismuth-Tellurium Nanowire Array Thermoelectric Materials by Electrodeposition Technology

WANG Wei, ZHANG Wei-Ling, WANG Hui, TAO Shong, ZHANG Jian-Zhong (School of Chemical Engineering and Technology, Tianjin University, Tianjin 300372, China; Analysis Center of Tianjin University, Tianjin 300072, China; Tianjin Institute of Power Source, Tianjin 300072, China)  
The electrodeposition process of bismuth-tellurium co-deposition was studied, and the effects of temperature and HNO3 concentration on the co-deposition process were also analyzed. Based on the work, n-type bismuth-tellurium nanowire array thermoelectric materials were fabricated through DC electrodeposition by using anodic alumina template with a pore diameter of 50nm as the cathode. The results show that electrodeposition potential has great effect on the compositon of bismuth-tellurium alloy.
【Fund】: 国家自然科学基金(50071040)
【CateGory Index】: TN304
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