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Preparation and Characterization of Ultrafine Crystal TS-1 Films

WANG Xiao-Dong,YAN Jing,HUANG Wei (Key Laboratory of Coal Science and Technology of Ministry of Education and Shanxi Province,Taiyuan University of Technology, Taiyuan 030024,China)  
The compact,uniform and continuous seed layers were prepared on porousα-Al_2O_3 substrates with oval-shaped and ultrafine seed crystals by ultrasonic seeding,and then TS-1 films were formed after secondary growth.The microstructure of the films could be regulated by changing the ratios of OH~-/Si and the crystallization time.SEM and XRD results reveal that when the ratio of OH~-/Si is equal to 0.09,after 24h of crystallization time, the film is not interconnected.If the crystallization time is prolonged to 48h,the film have become dense and interconnected, the crystals in which are about 500nm,and when the reaction time is prolonged to 72h,the crystallinity of the film decreases,and the surface of the film is covered with a layer of amorphous materials.When the ratio of OH~-/Si is increased to 0.21,after 24h of crystallization time,the crystal grains in the top layer are about 400nm and the structure of the TS-1 film is asymmetric,with a dense and uniform TS-1 layer on top,the support at the bottom, and the seed layer in between.
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