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Preparation of PZT Ferroelectric Thin Films by the Sol-Gel Process

Tan Hong; He Jinlin; Wang Dacheng(Guizhou Research Centre of Physical Testing and Chemical Analysis Guiyang 550002 China)  
PZT ferroelectric films were prepared from corresponding metal alkoxide partially stabilized with acetylacetone through the sol-gel solution. The films were heat-treated at 400℃ for decomposition of residual organics and then at 500℃~700℃ for crystallization of the films. The formation and crystallization of PZT films were studied by using XRD, TEM, IR, TGA, DTA.
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