Preparation of PZT Ferroelectric Thin Films by the Sol-Gel Process
Tan Hong; He Jinlin; Wang Dacheng(Guizhou Research Centre of Physical Testing and Chemical Analysis Guiyang 550002 China)
PZT ferroelectric films were prepared from corresponding metal alkoxide partially stabilized with acetylacetone through the sol-gel solution. The films were heat-treated at 400℃ for decomposition of residual organics and then at 500℃～700℃ for crystallization of the films. The formation and crystallization of PZT films were studied by using XRD, TEM, IR, TGA, DTA.