Influence of AlN buffer layer on the quality of ZnO thin films
ZONG Lei1, LI Qing-shan1,2, LI Xin-kun1, ZHANG Xia3, LIANG De-chun1, XU Yan-dong1(1. Department of Physics, Qufu Normal University, Qufu 273165, China;2. Ludong University, Yantai 264025, China;3. Laser Research Institute, Qufu Normal University, Qufu 273165, China)
ZnO thin films are prepared by pulsed laser deposition method on Si (100) substrates with AlN thin film as the buffer layer. X-ray diffraction, scanning electronic microscopy and the photoluminescence spectrums of the samples are taken. The results suggest that the AlN buffer layer can improve the quality of ZnO thin film. Further study on the samples with AlN buffer layers deposited at different temperatures (50～500 ℃) indicates that high quality ZnO thin films can be grown on the buffer layer deposited at lower temperature. The best ZnO films can be obtained if AlN buffer layers are deposited at 100 ℃.