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《Journal of Xidian University》 1988-02
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An Investigation of PECVD SiN Film Stress Character

Yang Xuhua Sun Qing  
The stress of plasma enhance chemical vapor deposition(PECVD)SiN film has been measured with a system made by ourselves with reactant gases being SiH_4 and N_2.The system uses laser beam deflection to measure the deformation of substrate.The result shows that the stress of SiN film is complessive,ranging within 1~3×10~9 N/m~2 and depending on the technological conditions,such as deposition temperature,gas composition. The int rinsic stress of SiN film also compressive with the magnitude of 1.1×10~9 N/m~2.Finally the Equivalant Grain Model is presented to explain the stress of SiN film with a satisfacter result.
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