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《Journal of Xidian University》 1988-02
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An Investigation of PECVD SiN Film Stress Character

Yang Xuhua Sun Qing  
The stress of plasma enhance chemical vapor deposition(PECVD)SiN film has been measured with a system made by ourselves with reactant gases being SiH_4 and N_2.The system uses laser beam deflection to measure the deformation of substrate.The result shows that the stress of SiN film is complessive,ranging within 1~3×10~9 N/m~2 and depending on the technological conditions,such as deposition temperature,gas composition. The int rinsic stress of SiN film also compressive with the magnitude of 1.1×10~9 N/m~2.Finally the Equivalant Grain Model is presented to explain the stress of SiN film with a satisfacter result.
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【Co-citations】
Chinese Journal Full-text Database 10 Hits
1 Sun Junfeng,Shi Xia (Nanjing Electronic Devices Institute,Nanjing 210016,China);Study of Internal Stress in PECVD SiO_2 Thin Films[J];Semiconductor Technology;2008-05
2 ;Current Researches on Perovskite-type and Perovskite-Iike Complex Oxides[J];Materials Review;1996-01
3 Peng Lietao,Lin Gengqi,Liao Hongwei,Li Zhen,Li Zuoyi(Department of Electric Sci.& Tech.,Hua Zhong University of Sicence & Tech.,Wuhan 430074,China);Research of Preparation and Properties of Lower-electrode (Pt/Ti) of Ferroelectric Thin Film Memory[J];Magnetic Recording Materiais;2002-03
4 Wang Peiying, Bai Tiecheng, Yao Ming, Qiu Muqin (Huazhong University of Science and Thechnology Wuhan 430074);Thick film ink of ZnLiFeO 3 for high temperature NTC thermistors[J];ELECTRONIC COMPONENTS $ MATERIALS;1998-01
5 Yang Jiannan Ma Chenglong (Department of Chemistry,Liaoning University,Shenyang);THE UV-VIS ADDITION SPECTRUM TECHNIQUE[J];Analytical Instrumentation;1988-04
6 Xu Denggao East China Institute of Technology;Process Study of Semitransparent Vacuum Ultraviolet Photocathode with High Quantum Yield[J];Optoelecfronic Technology;1989-03
7 Wang Pei-ying Liu Mei-dong Wu Guo-an Rao Yun-hua (Department of Solid State Electronics, Huazhong University of Science and Technology, Wuhan, 430074, China);Study on Mechanical Properties of Ferroelectrics Thin Films Prepared by Sol-gel Method[J];Journal of Functional Materials;1993-01
8 Shen Xiaonong;Wang Hong;Shang Shuxia(Yantai University,Yantai,264005, China)(The Crystal Institute of shan Dong University, Jinan,250100, China)(The Experiment Center of Shan Dong University,Jinan, 250100,China);The Measurement of I-V Characteristics and the Conductive Mechanism of Ferroelectric Bi_4Ti_3O_(12)Thin Film[J];JOURNAL OF FUNCTIONAL MATERIALS;1995-04
9 Chen Pusheng; Wang Feng; Feng Wenxiu;Wang Chuanb ;Zhang Xiaowen(Dept. of Appl Phys., South China Univ. of Tech., Guangzhou,510641, CHN)(Guangdong Electron Technology College, Guangzhou, 510515, CHN)(Information Research Institute, South Stone Company, Gua;Test and Analysis of I-V Characteristic and Breakdown Mechanism of SiO_xN_y Thin Film Fabricated by PECVD Method[J];RESEARCH & PROGRESS OF SOLIA STATE ELECTRONICS;1997-04
10 Bai Tiecheng Dept of Electronics Sci. & Tech., HUST, Wuhan 430074, China. Wang Peiying Dai Daowen Liu Shijun;Effect of Glass Phase on High Temperature Stability of Thick Films in Tungsten System[J];JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY;1999-05
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