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Simultaneous Determination of Minority Carrier Lifetime and Surface Generation Velocity Using a MOS C-V Technique

Huang Qingan Shi Baohua Zhang Desheng Gu Ying  
Based on the deeply depleted high frequency MOS C-V characteristics derived in response to a linear voltage sweep,A new method for rapidly determining minority generation lifetime and surface generation velocity, is developed,which takes the modified generation width into account.
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