Effects of Post-diffusion Annealing on NP Conventional Silicon Solar Cells
Chen Kun Lin Shiyi(Department of Physics)
The effects of post-diffusion annealing on the performances of N+P eonven-tional silicon solar cells were investigated. Experimental results showed that the conversion efficiency of solar cell increased after annealing and reached a maximum value at a temperature of about 550℃. It was concluded preliminarily that the concentration of a "fundamental" deep level recombination center in the base and depletion region decreased greatly and some "non-fundamental" centers disappeared after annealing at about 550℃. The use of the post-diffusion annealing method is three-fold: (a) to recover the minority carrier diffusion length in base region, (b)to reduce the recombination current density in deple tion region, and (c) to raise the conversion efficiency of solar cell.
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