Numerical analysis of flow process of gas in the MOCVD reactor
CHEN Yan, CHEN Dan-ye (Vocational Technical College of Shanghai University of Engineering Science, Shanghai 200437, China)
The mathematics model of Metal organic chemical vapor deposition (MOCVD) reactor with system of GaN deposition in a reactor was established. On the base of the reactor model which was solved numerically by GAMBIT software with two-dimensional numerical study of transport process in the MOCVD reactor, the distributions of transport phenomena has been predicted then. The numerical results analyze that the optimum of transport process for film growth are low-pressure and short-distance between inlet and substrate.