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EFFECT OF γ-RAY IRRADIATION ON THE CHARACTERISTICS OF SEMICONDUCTOR DEVICES

Ma Liguo, Zhu Jinhua, Wang Shunshou (Department of Physics) Wang Jinrong, Gao Zhonglin, Cao hong, Shen Qingkang (Agricultural Science Research Institute of the Lixiahe Area, Jiangsu)  
Effect of γ-ray irradiation on the reversed breakdown voltage BV_(ceo) and BV_(ebo) and amplification coefficient h_(FE) of the n-p-n type semiconductors doped with phosphorus and boron has been studied. The experimental results are interpreted with point defects induced by γ-ray irradiation.
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