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《Journal of Zhejiang University(Natural Science)》 1993-01
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High-voltage device in HVCIC——LDMOSFET in RESURF structure

Xu Jiaquan Lang Jinrong Ye Runtao Zhu Dazhong(Power Device Research Institute,Zhejiang University)  
LDMOSFET (Lateral Channel Double Diffusion MOSFET)in RESURF(Reduce Surface Field)structure is an ideal high voltage output device in HVIC(High-Voltage IC). In this paper a theoretic analysis and computer simulation to LDMOSFET in RESURF structure were carried out. In order to find the design rules amd the compatible processing with bipolar devices, testing drvices of LDMOSFET in RESURF structure with different length of drift region were designed combined with NPN and PNP transistors. After processing a LDMOSFET in RESURF structure with 350V breakdown voltage was obtained and was compatible with low vlotage bipolar transistors.
【Fund】: 浙江省科委自然科学基金
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Chinese Journal Full-text Database 10 Hits
1 Tang Benqi 1,2 , Luo Jinsheng\+1(1\ Xi'an Jiaotong University, Xi'an\ 710049) Geng Bin\+2, Li Guozheng\+2(2\ Northwest Institute of Nuclear Technology, Xi'an\ 710024);Optimal Analysis of New Structure of Lateral High\|Voltage Device[J];CHINESE JOURNAL OF SEMICONDUCTORS;1999-09
2 ;The New Developing Tendency of Power Electronics[J];Power Electronics;1996-04
3 Tang Guohong Chen Deying;Research of HVIC by Using LDMOS[J];Journal of Electron Devices;1991-03
4 SUN Weifeng, WU Jianhui, LU Shengli, SHI Longxing (Southeast University National ASIC System Engineering Center, Nanjing, 210096 P.R.China);A Novel Analytic Model on Surface Voltage and Electric Field of the Drift of Offset-Gate MOS[J];Journal of Electron Devices;2002-03
5 Woulheast universily;Liu guang─ting;Phystcal Midels of Computer Simulationof the Terminal Smicturs for High─ Voltage and Power MOSFET[J];JOURNAL OF ELECTRON DEVICES;1995-02
6 Chen Xingbi(University of Electronic Science and Technology of China).;Power MOS Devices[J];Acta Electronica Sinica;1990-05
7 HE Jin,ZHANG Xing,HUANG Ru,WANG Yang yuan(Institute of microelectronics,Peking University,Beijing 100871,China);Calculation of Punch-Through Limited Breakdown Voltage of Parallel-Plane Junction and Comparisons[J];Acta Electronica Sinica;2001-05
8 HE Jin 1,ZHANG Xing 1,HUANG Ru 1,LING Xiao yun 2,HE Zhe hong 2 (1 Institute of Microelectronics,Peking University,Beijing 100871,China; 2 Institute of Application Electrical Technology,Mianyang,Sichuan 646300);Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance[J];Acta Electronica Sinica;2002-02
9 WU Rui 1,2 , HUANG Fei hong 1, ZHENG Guo xiang 1, ZONG Xiang fu 1 (1.Department of Materials Science, Fudan University, Shanghai 200433, China; 2.Advanced Semiconductor Manufacturing Corp., Shanghai 200233, China);The Simulation and Verification of the Technique for High-Voltage CMOS[J];Journal of Fudan University;2002-02
10 LU Shengli SUN Weifeng YI Yangbo TAN Yue WU Jianhui SHI Longxing (Southeast University National ASIC System Engineering Research Center, Nanjing, 210096, CHN);High Voltage CMOS Design for Plasma Display Panel Data Driver IC[J];Research & Progress of Solia State Electronics;2002-01
【Secondary References】
Chinese Journal Full-text Database 1 Hits
1 ZHANG Jie1,LI Wenshi11.School of Electronics and Information,Suzhou University, Suzhou Jiangsu 215021, China2.The country lab of ASIC, Dongnan University, Nanjing Jiangsu 210096, China;Rapid Design Method of Flyback Switching Converter[J];Chinese Journal of Electron Devices;2009-03
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