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《Journal of Zhejiang University(Natural Science)》 1993-01
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High-voltage device in HVCIC——LDMOSFET in RESURF structure

Xu Jiaquan Lang Jinrong Ye Runtao Zhu Dazhong(Power Device Research Institute,Zhejiang University)  
LDMOSFET (Lateral Channel Double Diffusion MOSFET)in RESURF(Reduce Surface Field)structure is an ideal high voltage output device in HVIC(High-Voltage IC). In this paper a theoretic analysis and computer simulation to LDMOSFET in RESURF structure were carried out. In order to find the design rules amd the compatible processing with bipolar devices, testing drvices of LDMOSFET in RESURF structure with different length of drift region were designed combined with NPN and PNP transistors. After processing a LDMOSFET in RESURF structure with 350V breakdown voltage was obtained and was compatible with low vlotage bipolar transistors.
【Fund】: 浙江省科委自然科学基金
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【Co-references】
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Chinese Journal Full-text Database 1 Hits
1 ZHANG Jie1,LI Wenshi11.School of Electronics and Information,Suzhou University, Suzhou Jiangsu 215021, China2.The country lab of ASIC, Dongnan University, Nanjing Jiangsu 210096, China;Rapid Design Method of Flyback Switching Converter[J];Chinese Journal of Electron Devices;2009-03
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