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《Journal of Zhejiang University(Engineering Science)》 2001-01
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A double-crystal XRD study of Ge/Si short period superlattice

JI Zhen\|guo, YUAN Jun, LU Huan\|ming, RUI Xiang\|xin, WANG Long\|cheng\;(State Key Laboratory for Silicon Material, Zhejiang Uni., Hangzhou 310027, China)  
Ge/Si short period superlattice (SPS) samples consisting of 1.5 mono\|layer Ge and 1.4-3.8 nm thick Si layer grown by gas source molecular beam epitaxy (GS\|MBE) were studied by double crystal X\|ray diffraction. For SPS samples with Si layer less than 2.4 nm, the satellite peaks caused by SPS structure in the rocking curve are quite broad and without fine interference structure. For SPS samples with thick Si layer, the rocking curves are sharp and fine interference structures exist. For SPS samples with Si layer thickness (\%L\%\-\{Si\}) between 2.1 nm and 2.9 nm, both broad and sharp peaks exist but without fine structure. Our results strongly support H. Sunamura's suggestion that the abnormal photoluminescence band in such SPS structure is caused by waviness formation of epi\|layer due to vertical correlation of thickness fluctuations by local strain field.
【Fund】: 国家自然科学基金资助项目 !(6 9776 0 0 6 )
【CateGory Index】: O72
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